| PART |
Description |
Maker |
| IRAMX20UP6 IRAMX20UP60A |
20A, 600V with open Emitter Pins 20A00V的开放式发射器针
20A 600V with open Emitter Pins
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| LXHL-BR0B2 LXHL-BW0B2 LXHL-PR03 LXHL-PH01 LXHL-BM0 |
(LXHL-xxxx) Luxeon Emitter
Luxeon Emitter 丽讯发射
|
luxeon
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| 2SD2459 |
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
