PART |
Description |
Maker |
IKD06N60R |
IGBT with integrated diode in packages offering space saving advantage
|
Infineon Technologies A...
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SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
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Infineon Technologies AG
|
IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
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Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管 From old datasheet system
|
Infineon SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MIG25Q906H MIG25Q906HA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
MIG50J906E |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-Technology with An...
|
INFINEON[Infineon Technologies AG]
|
IHW15T120 |
IGBTs & DuoPacks - 15A / 1200V IGBT and 9A / 1200V Diode in DuoPack IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
Infineon
|
FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟 Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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