| PART |
Description |
Maker |
| M48Z512A M48Z512A-70CS1 M48Z512A-70CS9 M48Z512A-70 |
CAP,TANT,CHIP,4.7UF,10%,25V
4 Mbit 512Kb x8 ZEROPOWER SRAM 4兆位的SRAM 512KB的x8 ZEROPOWER
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48Z128Y-70PM1 M48Z128Y-85PM1 M48Z128-70PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M48Z129V-85PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M48Z129V-70PM M48Z129V-70PMTR M48Z129V-85PM M48Z12 |
5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM
|
STMicroelectronics
|
| M48Z2M1V-85PL1 |
16 MBIT (2MB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| 27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27 |
From old datasheet system
4 Mbit (512Kb x 8) UV EPROM and OTP EPROM
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMicroelectronics
|
| M48Z12 M48Z12-150PC1 M48Z12-150PC6 M48Z12-200PC1 M |
16 Kbit 2Kb x 8 ZEROPOWER SRAM 16千位2KB的SRAM的8 ZEROPOWER
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M50LPW040N5T M50LPW040 M50LPW040K M50LPW040K1T M50 |
From old datasheet system
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
4 MBIT (512KB X8, UNIFORM BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
