| PART |
Description |
Maker |
| GRM0115C1E1R7CE01 GRM0115C1E6R7CE01 GRM0112C1E1R6C |
Temperature range of temperature characteristics
Temperature characteristics (complied standard)
Temperature coefficient
Rated voltage
Operating temperature range
|
Murata Manufacturing Co...
|
| D20SB10 D20SB20 D20SB80 D20SB60 D20SB40 D20SB100 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified. 最大额定
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| GRM0335C1HR90WA01 |
Temperature characteristics (complied standard)
|
Murata Manufacturing Co...
|
| D20SB80 D20SB60 D20SB10 D20SB100 D20SB20 D20SB40 |
Maximum Ratings & Thermal Characteristics Ratings at 25?/a> ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
|
LRC[Leshan Radio Company]
|
| D4SB10 D4SB20 D4SB40 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
|
乐山无线电股份有限公
|
| BTS244Z BTS244-Z |
Transient Voltage Suppressor Diodes
Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)
|
Infineon Technologies AG
|
| OM200F120CMD |
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25 C unless otherwise specified)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| DN |
NTC Thermistors, Applications Include: Temperature Measurement, Temperature Control, Inrush Current Limiting, Temperature Compensation, Sensing Liquid Level or Air Flow
|
Vishay
|
| LVDS |
LVDS Description and Family Characteristics
LVDS Description and Family Characteristics
|
Fairchild Semiconductor Corporation
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| MB6052USZ-2 |
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20掳C, RH=65%)
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20°C, RH=65%)
|
Knowles Electronics
|
