| PART |
Description |
Maker |
| 1N5811 1N5811US 1N5807-1 JANTX1N5811 JAN1N5809 1N5 |
Low Power, Two-Port, Hi-Speed USB2.0 (480Mbps) Switch; ; No of Pins: 10; Container: Tape & Reel
ULTRA FAST RECTIFIERS
UltraFastRectifiers
UltraFastRectifier(lessthan100ns)
ULTRA FAST RECTIFIERS
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
| 1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
Ultra High Speed Switching Application
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| 10DF 10DF6 10DF2 10DF4 10DF8 10DF8TR 10DF1 |
Ultra Fast Switching Rectifier(超快开关整流器)
ULTRAFAST SWITCHING RECTIFIER
200V 1A Ultra-Fast Discrete Diode in a DO-204AL package
400V 1A Ultra-Fast Discrete Diode in a DO-204AL package
800V 1A Ultra-Fast Discrete Diode in a DO-204AL package
|
IRF[International Rectifier]
|
| 2SD1624 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| 2SB1201 |
Low collector-to-emitter saturation voltage. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
| 1N4148WS |
High Speed Switching Diode Fast Switching Speed Automatic Insertion
|
First Components International
|
| XP161A02A1PR |
N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
|
Torex Semiconductor
|
| 2SB1578 2SB1578GB2 2SB1578GB1 2SB1578-GB3 |
5 A, 60 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC, Corp.
Panasonic Semiconductor
|
| UFS1200 |
Ultra Fast Recovery Pack: SMA
SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE拢潞1200V CURRENT拢潞 1.0A
SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE?200V CURRENT 1.0A
|
Gulf Semiconductor
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
