| PART |
Description |
Maker |
| SK100DAL100D SK100DB100D |
NPN POWER DARLUNGTON MODULES 100A 1000V 100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Power Darlington Modules
|
Semikron International
|
| VBO54-12NO7 VBO54-14NO7 VBO54-16NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUO27-06NO7 VUO27-08NO7 VUO27-12NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| PKA2432PIL PKA2231CI PKA2231PI PKA2000 PKA2211CI P |
V(in): -0.5 to 36V; 25-40W DC/DC power module
25?40 W DC/DC Power Modules 24 V Input Series
25-40 W DC/DC Power Modules 24 V Input Series 25-40中西区区议会/ DC电源模块24 V输入系列
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| SK100DB060D |
NPN POWER DARLUNGTON MODULES 100A 600V
NPN Power Darlington Modules
|
Semikron International
|
| MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142- |
Thyristor and Rectifiers Modules
HIgh Power Diode Modules 165 A, 800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1800 V, SILICON, RECTIFIER DIODE
HIgh Power Diode Modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IRK2F200-12HJ IRK2F200-12HK IRK2F200-08HJ IRK2F200 |
MAGN-A-pak?/a> Power Modules
MAGN-A-pak Power Modules
MAGN-A-pak⑩ Power Modules
|
International Rectifier
|
| MID150-12A4 MII150-12A4 IXYSCORP-MID150-12A4 |
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
