PART |
Description |
Maker |
BZX85C30 BZX85C33 BZX85C6V2 BZX85C6V8 BZX85C43 BZX |
18V, 1W Zener Diode Zeners 5.1V, 1W Zener Diode 4.7V, 1W Zener Diode 3.9V, 1W Zener Diode 6.2V, 1W Zener Diode 5.6V, 1W Zener Diode 11V, 1W Zener Diode 10V, 1W Zener Diode 8.2V, 1W Zener Diode 27V, 1W Zener Diode 13V, 1W Zener Diode 22V, 1W Zener Diode 51V, 1W Zener Diode 56V, 1W Zener Diode 33V, 1W Zener Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode 13 V, 9.5 mA, zener diode 36 V, 3.4 mA, zener diode 3.3 V, 20 mA, zener diode 30 V, 4.2 mA, zener diode 15 V, 8.5 mA, zener diode 8.7 V, 20 mA, zener diode 2.5 V, 20 mA, zener diode 62 V, 2.0 mA, zener diode 3.3 V, 20 mA, zener diode 19 V, 6.6 mA, zener diode 33 V, 3.8 mA, zener diode 56 V, 2.2 mA, zener diode 11 V, 20 mA, zener diode 28 V, 4.5 mA, zener diode 24 V, 5.2 mA, zener diode 60 V, 2.1 mA, zener diode 60 V, 2.1 mA, zener diode 39 V, 3.2 mA, zener diode 39 V, 3.2 mA, zener diode 17 V, 7.4 mA, zener diode 14 V, 9.0 mA, zener diode 12 V, 20 mA, zener diode 18 V, 7.0 mA, zener diode 5.6 V, 20 mA, zener diode 82 V, 1.5 mA, zener diode 87 V, 1.4 mA, zener diode 4.7 V, 20 mA, zener diode 47 V, 2.7 mA, zener diode 7.5 V, 20 mA, zener diode 110 V, 1.1 mA, zener diode 2.8 V, 20 mA, zener diode 24 V, 5.2 mA, zener diode 28 V, 4.5 mA, zener diode 25 V, 5.0 mA, zener diode 1N52 SERIES ZENER DIODES FKC 2.5/6-STF Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 250μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) 2.5 V, 20 mA, zener diode 36 V, 3.4 mA, zener diode 9.1 V, 20 mA, zener diode 11 V, 20 mA, zener diode 62 V, 2.0 mA, zener diode 110 V, 1.1 mA, zener diode 3.9 V, 20 mA, zener diode 82 V, 1.5 mA, zener diode 16 V, 7.8 mA, zener diode 12 V, 20 mA, zener diode 3.9 V, 20 mA, zener diode 43 V, 3.0 mA, zener diode 68 V, 1.8 mA, zener diode 68 V, 1.8 mA, zener diode 56 V, 2.2 mA, zener diode 30 V, 4.2 mA, zener diode 43 V, 3.0 mA, zener diode 6.2 V, 20 mA, zener diode 3.0 V, 20 mA, zener diode 33 V, 3.8 mA, zener diode 14 V, 9.0 mA, zener diode 8.2 V, 20 mA, zener diode 2.8 V, 20 mA, zener diode 6.8 V, 20 mA, zener diode 75 V, 1.7 mA, zener diode 10 V, 20 mA, zener diode 47 V, 2.7 mA, zener diode 75 V, 1.7 mA, zener diode 51 V, 2.5 mA, zener diode 100 V, 1.3 mA, zener diode 8.7 V, 20 mA, zener diode 22 V, 5.6 mA, zener diode
|
LRC[Leshan Radio Company] 乐山无线电股份有限公 Leshan Radio Company, Ltd.
|
DF2S16FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation Toshiba Semiconductor
|
DF2S8.2S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.08 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation Toshiba Semiconductor
|
DF3A5.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation Toshiba Semiconductor
|
DF2S6.8FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
WT-Z210P |
Zener Diode Chips (Dual Pad) for ESD Protection
|
Weitron Technology
|
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000 3.9V, 0.35W Zener Diode 27V, 0.35W Zener Diode 6.8V, 0.35W Zener Diode 33V, 0.35W Zener Diode 13V, 0.35W Zener Diode 9.1V, 0.35W Zener Diode 15V, 0.35W Zener Diode 30V, 0.35W Zener Diode 16V, 0.35W Zener Diode 3.3V, 0.35W Zener Diode 20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
OSB4XZE1E1E |
Xeon 1 Power Blue LED Built-in Zener Diode For ESD Protection Highest Luminous Flux
|
OptoSupply International
|
|