| PART |
Description |
Maker |
| ADR391 ADR395 ADR390 ADR392 ADR391ART-RL ADR392ART |
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO5
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO5
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.096 V, PDSO5
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO5
ER 3C 3#16S SKT PLUG
CONNECTOR ACCESSORY
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| ADR370 ADR370BRT-R2 ADR370BRT-REEL7 ADR370ART-REEL |
Precision Low Power 2.048 V SOT-23 Voltage Reference
|
AD[Analog Devices]
|
| LM4040CEX3-2.5-T LM4040CEM3-2.5T LM4040CEM3-2.5-T |
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3 V, PDSO3
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 4.096 V, PDSO3
Improved Precision Micropower Shunt Voltage Reference with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 5 V, PDSO3
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| 5962-8874002KA 5962-8874002LA 5962-8874002JA 5962- |
Improved Precision Micropower Shunt Voltage Reference x8的SRAM
x8 SRAM x8的SRAM
|
Glenair, Inc.
|
| TC514402J TC514402J-10 TC514402J-80 TC514402Z-10 T |
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
MB 3C 3#16 PIN RECP 1,048,576 × 4位动态随机存储器
MB 10C 10#20 PIN RECP 1,048,576 × 4位动态随机存储器
|
Toshiba, Corp.
Maxim Integrated Products, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns
1,048,576-WORD x 4-BIT DYNAMIC RAM
1,048,576-word x 4-bid DRAM, 60ns
1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|
| IDT7290820 IDT7290820PQF IDT7290820PF IDT7290820BC |
2K x 2K TSI, 16 I/O at 2/4/8Mbps, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 2,048 x 2,048
|
IDT[Integrated Device Technology]
|
| THM401020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDSx40位动态RAM模块
1,048,576 WORDSx40 BIT DYNAMIC RAM MODULE
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSM531622F |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM(1M字6位或2M字位掩膜ROM 1,048,576字16位或2097152字8位MASKROM00万字× 16位或200万字× 8位掩膜ROM的字
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V1602D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM(1M字6位或2M字位一次性可编程ROM 1,048,576字16位或2097152字8位一次性可编程00万字× 16位或200万字× 8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
| NM27C010 27C010 |
1,048,576-Bit (128K x 8) High Performance CMOS EPROM 1,048,576位（128K的8）高性能CMOS存储
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
|
