| PART |
Description |
Maker |
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| UFS180G |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| 1N6304HCE 1N6305HCE 1N6305KCE 1N6306KCE 1N6304KCE |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| UHVP802 UHVP804 UHVP806 |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| 30HFU-600 60HFU-600 30HFU-300 60HFU-300 30HFU-200 |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| UES706HR2 |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| UES2605HR2 UES2606HR2 UES2604HR2 |
Ultra Fast Rectifier (less than 100ns)
|
Microsemi
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| UPR5E3 UPR5E3/TR13 UPR5E3/TR7 |
Ultra Fast Rectifier (trr less than 100ns)
|
Microsemi
|
| 1N5809CBUS 1N5807CBUS 1N5811CBUS |
Ultra Fast Rectifier (trr less than 100ns)
|
Microsemi
|
| 2CLG15KV-3A |
3.0A 15kV 100nS--High Voltage Rectifier Assembly
|
GETAI ELECTRONICS DEVIC...
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