| PART |
Description |
Maker |
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| ZL40000 |
3/6 Channel DC to 2 GHz Power Splitter
|
Zarlink
|
| ZL40000LCE ZL40000 |
3/6 Channel DC to 2 GHz Power Splitter
|
ZARLINK[Zarlink Semiconductor Inc]
|
| AGR21180EF |
180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| CMM3566-LC-000T PB-CMM3566-LC |
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3.45.5 GHz 7.0伏，24 dBm的的W - CDMA功率放大
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3450 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CFS0103-SB08 CFS0103-SB-0G00 |
0.1-10.0 GHz Low Noise, Medium Power
X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
MIMIX BROADBAND INC
|
| SA1056 |
CDMA 1.5-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
| AWB7123HM41P8 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6283RM49P8 |
3.3 GHz to 3.8 GHz Mobile WiMAX Power Amplifier Module
|
ANADIGICS, Inc
|
