| PART |
Description |
Maker |
| 1N5988 1N5993 1N5987 1N5989 1N5997 1N5996 1N6029 1 |
From old datasheet system
Axial-Leaded 500 mW Zener Diodes
SILICON 500 mW ZENER DIODES
3.3V Input to Regulated 5V Output Charge Pumps
Static Protection Wrist Grounder; Body Material:Fabric RoHS Compliant: NA
Zener Voltage Regulator Diode 8.2 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 180 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 33 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 39 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 15 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Zener Voltage Regulator Diode 100 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Insulating Tape; Peak Reflow Compatible (260 C):No 27 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
|
MICROSEMI CORP-LAWRENCE
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| HER202G HER201G |
Passivated High Efficient Rectifiers 50 to 1000 Volts 2.0 Amp Glass 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Micro Commercial Components, Corp.
|
| 1N4616D 1N4626 |
Leaded Zener Diode General Purpose
2.2 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
|
CENTRAL SEMICONDUCTOR CORP
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| 1N4454-TP |
400mW 75 Volt Silicon Epitaxial Diode
|
Micro Commercial Components
|
| 1N4454 |
400mW 75 Volt Silicon Epitaxial Diode
|
MCC[Micro Commercial Components]
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| SML60EUZ06B |
Enhanced Ultrafast Recovery Diode 600 Volt, 60Amp 60 A, 600 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| CBR6-100 CBR6-010 CBR6-020 CBR6-040 CBR6-060 CBR6- |
3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
SILICON BRIDGE RECTIFIER 6.0 AMPS, 100 THRU 1000 VOLTS
Leaded Bridge Rectifier General Purpose
|
CENTRAL[Central Semiconductor Corp]
|
|
