| PART |
Description |
Maker |
| ADP3330ARTZ-2.5-R7 ADP3330ARTZ-3.6-R7 ADP3330ARTZ- |
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6
3.6 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ROHS COMPLIANT, ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.75 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
3 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| ISPLSI8840V-125LB272 ISPLSI8840V-90LB272 ISPLSI884 |
EE PLD, 24 ns, PBGA272 THERMALLY ENHANCED, BGA-272
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFA080551E PTFA080551F |
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz
|
Infineon Technologies AG
|
| PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
