PART |
Description |
Maker |
AAT3111 AAT3111-33 AAT3111IGU-33-T1 AAT3111IJS-33- |
MicroPowerRegulated Charge Pump 微功耗稳压电荷泵 MicroPower⑩ Regulated Charge Pump MICROPOWER⒙ REGULATED CHARGE PUMP MicroPower Regulated Charge Pump
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Advanced Analogic Technologies, Inc.
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1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. High speed high conductance diode. Working inverse voltage 175 V. General purpose low diode. Working inverse voltage 100V. 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). General purpose low diode. Working inverse voltage 200V. General Purpose Diodes
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor] http://
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CAT660 CAT660ELA CAT660EVA CAT660EVA-T3 |
100 mA CMOS Charge Pump Inverter/Doubler Charge Pump Voltage Converter SWITCHED CAPACITOR CONVERTER, PDSO8
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ON Semiconductor
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AP30T03GH-HF AP30T03GH-HF-14 |
Lower Gate Charge Lower Gate Charge 17 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Simple Drive Requirement
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Advanced Power Electronics Corp. Advanced Power Electron...
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2SA921 2SA09212SA921 2SA0921S 2SA921R |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 20mA的一(c)|2 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 20mA的一(c)|92 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
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TE Connectivity, Ltd. Infineon Technologies AG Matsshita / Panasonic
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NMRTB-CSS-T3U3U3V3R3S3 |
SPNovaLED: 20mA
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DOMINANT Semiconductors
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ADG604 ADG604YRU ADG604YRUZ-REEL7 ADG604YRU-REEL A |
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer 1 pC Charge Injection, 100 pA Leakage CMOS 卤5 V/5 V/3 V 4-Channel Multiplexer IC,ANALOG MUX,QUAD,1-CHANNEL,CMOS,TSSOP,14PIN,PLASTIC 1 PC CHARGE INJECTION, 100 PA LEAKAGE CMOS 5 V/5 V/3 V 4-CHANNEL MULTIPLEXER 1pC Charge Injection, Low Leakage CMOS 4-Channel Multiplexer
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Analog Devices, Inc. adi
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DMS-20PC-4_20B-C DMS-20PC-4_20P-C DMS-BZL4-C DMS-P |
Subminiature 4-20mA Loop-Powered 3篓枚 Digit LED Process Monitors Subminiature 4-20mA Loop-Powered 3陆 Digit LED Process Monitors Subminiature 4-20mA Loop-Powered 3? Digit LED Process Monitors
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Murata Power Solutions Inc.
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GB19264FSGABNDB-V00 GB19264FSGABNDA-V00 GB19264FSG |
DISPLAY,7SEG,CC,BLUE,1DIG,RHDP 460nm,0.4"H,3.5V@20mA,12.8mcd DISPLAY,7-SEG,CC,RED,1DGT, 660nm,RHDP,1.7Vf20mA,21mcd20mA DSPLAY,7SEG,CC,GREEN,1DIG,RHDP 0.32"H,565NM,2.1V@20mA,3.5mcd DISPLAY,7-SEG,CC,GREEN,1DIG 565nm,0.4"H,RHDP,2.1V@20mA 规格液晶模块 DISPLAY 5",7-SEG,C.C.RED,1DGT 规格液晶模块 SPECIFICATIONS FOR LCD MODULE 规格液晶模块 DISPLAY,7-SEG,CA,RED,1DGT, 660nm,RHDP,1.7Vf20mA,21mcd20mA 规格液晶模块 *DISPLAY,7-SEG,CA,RED,1DGT,697 nm,LH/RHDP,2.1Vf20mA2.5mcd20m 规格液晶模块
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Jewel Hill Electronic Co., Ltd.
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