| PART |
Description |
Maker |
| SFH4257 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| SFH4140 |
High Power Infrared Emitter (940 nm)
|
OSRAM GmbH
|
| ASDL-4360 ASDL-4360-C22 |
High Power and High Speed Infrared Emitter (885nm) in PLCC-2 Package
|
AVAGO TECHNOLOGIES LIMITED
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OPE5985 |
High Speed GaAlAs Infrared Emitter
|
OPTEK Technologies
|
| SFH4850E7800 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4556 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| ASDL-4561 ASDL-4651-C22 |
High Performance Infrared Emitter (870nm) ChipLED
|
AVAGO TECHNOLOGIES LIMITED
|
| SFH4043 |
CHIPLED with High Power Infrared Emitter (940 nm)
|
OSRAM GmbH
|
| SFH4053 Q65111A0651 |
CHIPLED with High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
