| PART |
Description |
Maker |
| IRFH4210DPBF IRFH4210DPBF-15 |
Schottky Intrinsic Diode with Low Forward Voltage
|
International Rectifier
|
| SPW15N60CFD |
Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| IXTA4N150HV IXTT4N150HV |
N-Channel Enhancement Mode Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFP14N85X |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F520N075T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTH02N250 IXTA02N250 IXTV02N250S |
High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode
|
IXYS Corporation
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| ZHCS350TC ZHCS350 ZHCS350TA |
High Current Schottky Diode
From old datasheet system
AM29LV081B-120EC 8MBIT FLASH
SOD523 40V LOW VF SCHOTTKY BARRIER DIODE 0.51 A, SILICON, SIGNAL DIODE
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
