| PART |
Description |
Maker |
| SPW15N60CFD |
Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| IXTQ69N30PM |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTT6N150 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| MMIX1F420N10T |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ3N150M |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA3N150HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTP05N100P IXTA05N100P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ480P2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| SD103AWS-TP SD103BWS-TP |
DIODE SCHOTTKY 40V 350MA SOD323 0.35 A, 40 V, SILICON, SIGNAL DIODE
400mW Small Signal Schottky Diode 20 to 40 Volts
DIODE SCHOTTKY 30V 350MA SOD323
|
Micro Commercial Components, Corp.
|
