PART |
Description |
Maker |
2SK3433 |
Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
2SK3480 |
Super low on-state resistance: RDS(on)1 = 31 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
2SK3482 |
Super low on-state resistance: RDS(on)1 = 33m MAX.Low Ciss: Ciss = 3600 pF TYP.
|
TY Semiconductor Co., Ltd
|
PS7341AL-1B PS7341A-1B |
6-PIN DIP, 20Ω LOW ON-STATE RESISTANCE 100 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET F/F GOLD PLATED KEYSTONE WHITE 6引脚DIP0ohm低导通状态电100pF的低输出电容1通道光学耦合场效应晶体管 6-PIN DIP, 20ohm LOW ON-STATE RESISTANCE 100 pF LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET 6引脚DIP0ohm低导通状态电100pF的低输出电容1通道光学耦合场效应晶体管
|
California Eastern Labs NEC[NEC] NEC Corp. NEC, Corp.
|
MLD685D |
Low on-state resistance
|
Sanken electric
|
UPA2690T1R |
COMPLEMENTARY MOSFET Low on-state resistance
|
Renesas Electronics Corporation
|
2SK3405 |
4.5-V drive available Low on-state resistance RDS( = 9.0m MAX. (VGS = 10 V, ID = 24 A)
|
TY Semiconductor Co., Ltd
|
2SK3113 |
Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID= 1.0 A) Avalanche capability ratings
|
TY Semiconductor Co., Ltd
|
2SK3640 |
Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|