| PART |
Description |
Maker |
| ENA1108A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP
|
ON Semiconductor
|
| 15GN03FA |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| SB007-03SPA SB007-03CPA |
30V/ 70mA Rectifier
Shottky barrier diode, 30V/70mA rectifier
30V, 70mA Rectifier
30V 70mA Rectifier
Schottky Barrier Diode
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| 2SD2397 2SD1866 2SD2143 2SD2212 |
Medium Power Transistor(Motor, Relay drive) (60±10V, 2A)
Medium Power Transistor(Motor, Relay drive) (60【10V, 2A)
|
ROHM[Rohm]
|
| 2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五（巴西）总裁|提供70mA一（c）|SOT - 323
VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| EN1719 |
Bipolar Transistor, 10V, 3A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
| Q62901-B13-C Q62901-B16-A Q62704-Y12 Q62704-Y12-B |
NPN Silicon Planar Trnasistors NPN硅平Trnasistors
NPN Silicon Planar Trnasistors NPN硅平面Trnasistors
DIODE SCHOTTKY DUAL COMMON-CATHODE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
DIODE SCHOTTKY DUAL COMMON-ANODE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
DIODE SCHOTTKY SINGLE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
OSC PROG BLANK 3.3V LVDS SMD
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
http://
|
| IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
