| PART |
Description |
Maker |
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
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NTE[NTE Electronics]
|
| Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 8A条口（T）的有效值| TO - 220AB现有
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五（DRM）的| 8A条口T）的有效值| TO - 220AB现有
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五（DRM）的| 4A条口（T）的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp.
Littelfuse, Inc.
|
| STK10C68-S30I STK10C68-C30I |
NVRAM (EEPROM Based)
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:10mA; Package/Case:3-TO-92; Current, It av:0.8A; Holding Current:15mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:35mA NVRAM中（EEPROM的基础
|
Cypress Semiconductor, Corp.
|
| 6MBP10VAA120-50 |
IGBT MODULE (V series) 1200V / 10A / IPM
|
Fuji Electric
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| CM50DU-24H |
IGBT Modules:1200V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM50TU-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1200V
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM50DY-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
IGBT Modules:1200V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HD614121S HD614146S |
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:45V; Package/Case:TO-220; Current Rating:10A; Forward Current:20A; Forward Voltage:0.84V; Mounting Type:Through Hole; Terminal Type:Radial Leaded
CMOS 4bit single-chip microcomputers 的CMOS 4位单片机
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Hitachi,Ltd.
TOKO, Inc.
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