| PART |
Description |
Maker |
| TC58NVG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0FBAI4 |
SLC NAND
|
TOSHIBA
|
| NAND512R3A2SN6F |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
Numonyx B.V
|
| S34MS01G2 S34MS02G2 S34MS04G2 |
1 Gbit/2 Gbit/4 Gbit SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| SLC |
SLC Class G Fuses
|
Littelfuse
|
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
| M38510/30009B2A M38510/30009BAA M38510/30009BAB M3 |
Single 8-input NAND Gate
Dual 4-input NAND Gate
Quad 2-input NAND Gate
Triple 3-input NAND Gate 3输入与非
Triple 3-input NAND Gate 输入与非
|
ITT, Corp.
Linear Technology, Corp.
Bel Fuse, Inc.
|
| IW4011B |
NAND gates provide the system designer with direct implementation of the NAND function
|
Estek Electronics Co. Ltd
|
