PART |
Description |
Maker |
TC58BVG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BYG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG2S0HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG0S3HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
TC58BVG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块,基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd. Sanken Electric Co., Ltd.
|
M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
SGN02G72F1BQ1SA SGN02G72F1BQ1SA-CCRT SGN02G72F1BQ1 |
204 Pin ECC SO-DIMM
|
Swissbit
|
KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|