| PART |
Description |
Maker |
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS220N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU310N10D-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK3503 2SK3503-T1 2SK3503-T2 |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| V10P6HM3 V10P6-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
