PART |
Description |
Maker |
BUY25CS12K-01 |
HiRel RadHard Power-MOS
|
Infineon Technologies A...
|
BFY280 BFY280H |
From old datasheet system HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon Siemens Semiconductor Group
|
BAT14 BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT1 |
From old datasheet system HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
APT6037HVR |
POWER MOS V 600V 15.5A 0.370 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT4014BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 400V 28A 0.140 Ohm
|
Advanced Power Technology Ltd.
|
APT6013JVR |
POWER MOS V 600V 40A 0.130 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT10M11LV APT10M11LVR |
POWER MOS V 100V 100A 0.011 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|