| PART |
Description |
Maker |
| 2SD1047 2SD1047E |
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 12A I(C) | TO-247VAR 晶体管|晶体管| npn型| 140伏特五（巴西）总裁| 12A条一（c）|47VAR
POWER TRANSISTORS(12A/140V/100W)
POWER TRANSISTORS(12A,140V,100W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SB817C-1E ENA0188B |
Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L
|
ON Semiconductor
|
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| STP12IE90F4 P12IE90F4 |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STP12IE95F4 P12IE95F4 |
Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm 发射极开关双极晶体管内酰胺酶9502A - 0.083欧姆
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4RC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.82V @Vge=15V Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| ZXTP23140BFH ZXTP23140BFHTA |
140V SOT23 PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| ZX5T955G |
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
|
Diodes Incorporated
|
| MIC4452BM MIC4452BN MIC4452CT MIC4451 MIC4451BM MI |
12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MICREL[Micrel Semiconductor]
|
| ZXTP25140BFH ZXTP25140BFHTA |
140V, SOT23, PNP medium power transistor
140V, SOT23, PNP medium power transistor
|
Diodes Incorporated
Zetex Semiconductors
|
