| PART |
Description |
Maker |
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCP49 Q62702-C2137 BCP29 Q62702-C2136 |
From old datasheet system
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
|
SIEMENS[Siemens Semiconductor Group]
|
| 2SC5069 |
High current capacity. Adoption of MBIT process. High DC current gain.
|
TY Semiconductor Co., Ltd
|
| 6N138 6N139 |
LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER
LOW INPUT CURRENT, HIGH GAIN OPTOCOUPLER
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HCPL0730 HCPL0731 HCPL0700 HCPL0700R2 HCPL0700R2V |
Low Input Current High Gain Split Darlington Optocouplers
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel 2 CHANNEL LOGIC OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor, Corp.
|
| BC808-16W BC808-25W BC808-40W BC807-16W Q62702-C23 |
SH-Tiny Series, 7125 Group, Two ADC circuits, 6-ch 16-bit MTU2, Port Output Enable, 2-ch CMT, UBC, 15 mA IO -; Vcc= 4.5 to 5.5 volts, Temp= -20 to 85 C; Package: PVQN0052LE-A
PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| NTE27 |
Germanium PNP Transistor High Current, High Gain Amp
|
NTE[NTE Electronics]
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| TIP146F TIP147F TIP145F |
PNP (HIGH DC CURRENT GAIN)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
