| PART |
Description |
Maker |
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| Q62702-A3471 BAW78M |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4157 E000909 |
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
DIODES[Diodes Incorporated]
http://
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS397 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
