| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Compo...
Sharp Corporation
|
| TSHF5210 |
High Speed Infrared Emitting Diode in T-13/4 Package
|
VISAY[Vishay Siliconix]
|
| VSMF2893SLX01 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| TSFF5510 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSMF3710-GS18 TSMF3710 TSMF3710-GS08 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| VSMB3940X01 |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG5210 TSHG521009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
| TSMF3710-GS08 TSMF3710-GS18 TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
