| PART |
Description |
Maker |
| ISL9K18120 ISL9K18120G3 |
18A, 1200V Stealth Dual Diode
18A 1200V Stealth Dual Diode
18A, 1200V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m
N-Channel MOSFET 200V, 18A, 0.14楼?
N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
| ENA2152 |
N-Channel Power MOSFET, 12V, 18A, 5.9mOhm, Dual EFCP
|
ON Semiconductor
|
| SBR130S3-7 |
RECTIFIER SBR SINGLE 1A 30V 18A-ifsm 410Vf 0.1mA-ir SOD-323 3K/REEL 1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| LTM4628-15 |
Dual 8A or Single 16A DC/DC Module Regulator
|
Linear Technology
|
| RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STSJ80N4LLF3 |
N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET?III Power MOSFET for DC-DC conversion
N-channel 40V - 0.0042ヘ - 18A - PowerSO-8⑩ STripFET⑩III Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| IRF640S 6774 |
N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| GBPC2501 GBPC35005 GBPC25005 GBPC25 GBPC2510 GBPC3 |
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Dual General-Purpose Operational Amplifier 8-TSSOP 0 to 70
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS 大电5,25,35，安培。单相桥式整流器玻璃钝化
ECONOLINE: RSZ/P - 1kVDC ECONOLINE：RSZ / P - 1kVDC 2kVDC隔离UL94V - 0封装材料所需的散热片，无外置。组件所需的环形磁ContinuousShort电路保护 P的后缀
0.8 to 1.8-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85 大电5,25,35，安培。单相桥式整流器玻璃钝化
1.5 A, Wide Input, Non-Isolated, Wide Negative Output Adjust Module 5-DIP MODULE
10 A 12-V Input Bus Termination Power Module for DDR/QDR Memory 10-DIP MODULE -40 to 85
6-A Wide-Input Voltage Adjustable Switching Regulator 7-DIP MODULE -40 to 85
HIGH CURRENT 15/25/35/AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
8 A, 3.3-V Input Non-Isolated Wide-Output Adjust w/Auto-Track 8-SIP MODULE -40 to 85
|
Surge Components, Inc.
Shanghai Sunrise Electronics
SURGE[Surge Components]
|
| IRF5YZ48CM IRF5YZ48CM-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
