PART |
Description |
Maker |
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4BC20KDPBF IRG4BC20KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
MG15J6ES40 |
INSULATED GATE BIPOLAR TRANSISTOR
|
Toshiba Semiconductor
|
IRGP4069PBF |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|