| PART |
Description |
Maker |
| BLM7G1822S-40AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G24S-30BG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM8G0710S-30PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-20PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
