| PART |
Description |
Maker |
| BLM7G22S-60PB BLM7G22S-60PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM6G22-30 BLM6G22-30G |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
|
NXP Semiconductors N.V.
|
| CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A8370 CGY50 CGY50E6327 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block)
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
Broadband MMIC Amplifier
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
