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SMN1D - GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

SMN1D_8218331.PDF Datasheet


 Full text search : GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A 258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE Semiconductor
1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N (1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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RECTRON[Rectron Semiconductor]
1N3957GP 1N3611GP 1N3612GP 1N3613GP 1N3614GP GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
Glass Passivated Junction Rectifier(钝化玻璃结型整流
GE Security, Inc.
GE[General Semiconductor]
BY255GP BY251GP BY252GP BY253GP BY254GP Glass Passivated Junction Plastic Rectifiers 玻璃钝化结塑料整流器
Glass Passivated Junction Plastic Rectifiers, Forward Current 3.0A
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V
Vishay
3SMC6.5A 3SMC7.0A 3SMC9.0A Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,单向玻璃钝化节点瞬变电压抑制
Uni-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
Central Semiconductor Corp.
GL34K MINI-MELF glass passivated junction Diodes - Silicon passivated type
美丽微半导体有限公司
GL34M GL34A GL34B GL34D GL34G GL34J GL34K From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
FORMOSA[Formosa MS]
TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
FR251G05 GLASS PASSIVATED JUNCTION
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