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RJK0656DPB-00-J5 - 60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching

RJK0656DPB-00-J5_8213388.PDF Datasheet


 Full text search : 60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
 Product Description search : 60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching


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Metal Oxide Resistor; Series:MP800; Resistance:0.020ohm; Resistance Tolerance: /- 5 %; Power Rating:20W; Temperature Coefficient:0 to 300 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V 通用继电
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 通用继电
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 通用继电
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Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
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OMRON[Omron Electronics LLC]
http://
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