| PART |
Description |
Maker |
| STD35NF06L |
N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFET
N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFETII MOSFET
|
ST Microelectronics
STMicroelectronics
|
| ENA1755 |
P-Channel Power MOSFET, -60V, -35A, 29.5mOhm, Single ATPAK
|
ON Semiconductor
|
| 2SJ215 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-247VAR 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 35A条（丁）|47VAR
|
Cypress Semiconductor, Corp.
|
| IRCZ44-008 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 35A条（丁）|20VAR
|
Bright LED Electronics, Corp.
|
| BYY58-900 BYY57 BYY57-100 BYY57-1000 BYY57-1100 BY |
35A Silicon Power Rectifier Diode 35 A, 900 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35A条硅功率整流二极
35A Silicon Power Rectifier Diode 35 A, 1400 V, SILICON, RECTIFIER DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| BYP58-800 BYP57 BYP57-100 BYP57-150 BYP57-200 BYP5 |
35 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
35A Silicon Power Rectifier Diode 35 A, 150 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 75 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35 A, 500 V, SILICON, RECTIFIER DIODE
|
Diodes, Inc.
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| RJK0629DPN RJK0629DPN-00-T2 RJK0629DPN-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
