| PART |
Description |
Maker |
| FDD5810 |
N-Channel PowerTrenchMOSFET 60V, 35A, 27mOhm
|
Fairchild Semiconductor Corporation
|
| STRH40N6S1 STRH40N6SG |
Rad-Hard N-Channel 60V - 35A MOSFET
|
ST Microelectronics
|
| SBT350-06J |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| ATP212-TL-H ATP21212 ENA1507A ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| BYY58-900 BYY57 BYY57-100 BYY57-1000 BYY57-1100 BY |
35A Silicon Power Rectifier Diode 35 A, 900 V, SILICON, RECTIFIER DIODE
35A Silicon Power Rectifier Diode 35A条硅功率整流二极
35A Silicon Power Rectifier Diode 35 A, 1400 V, SILICON, RECTIFIER DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| 12CGQ150 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 150V
|
IRF[International Rectifier]
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
