| PART |
Description |
Maker |
| ADP1173AN-12 ADP1173AN-33 ADP1173AR-33 ADP1173 ADP |
Micropower DC-DC Converter
RECTIFIER SCHOTTKY SINGLE 1A 80V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDIP8
RECTIFIER SCHOTTKY DUAL 40A 60V 375A-ifsm 0.7V-vf 1mA-ir TO-3P 30/TUBE
RECTIFIER SCHOTTKY SINGLE 1A 90V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/REEL-13
|
http://
Analog Devices, Inc.
|
| RFH25P08 RFK25P08 RFK25P10 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC
-25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs
-25A -100V and -80V 0.150 Ohm P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HIP408206 HIP4082IPZ HIP4082 HIP4082IB HIP4082IBZ |
80V, 1.25A Peak Current H-Bridge FET Driver
|
INTERSIL[Intersil Corporation]
|
| RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching
100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| BD535K BD536J BD534K BD538K BD538J BD534 BD537 |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
|
Continental Device India Limited
|
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| FTR-P2 FTR-P2CP012W1 FTR-P2CN012W1 FTR-P2CP010W1 F |
SILENT TWIN RELAY FOR AUTOMOTIVE APPLICATIONS 1POLE X 2, H-BRIDGE, 25A 静音双继电器为汽车应POLE × 2，H桥，25A
|
Fujitsu Limited
Fujitsu, Ltd.
|
| 2SB1198 2SB1198K A5800312 2SB1198KQ |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-59
From old datasheet system
Low-frequency Transistor(-80V, -0.5A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low-frequency Transistor(-80V/ -0.5A)
|
ROHM[Rohm]
|
