| PART |
Description |
Maker |
| LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| BS107A BS107ARLRP BS107ARLRM BS107ARL1 BS107 BS107 |
Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92
From old datasheet system
Fast Recovery Glass Passivated Rectifier Diodes
|
ONSEMI[ON Semiconductor]
|
| LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
| MGSF1N02ELT1-D MGSF1N02ELT1G |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
Leshan Radio Company
|
| MGSF1N02LT1 MGSF1N02LT3 |
Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?3
|
TY Semiconductor Co., Ltd
|
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
