| PART |
Description |
Maker |
| HRS75N75V |
70V N-Channel Trench MOSFET
|
SemiHow Co.,Ltd.
|
| CDBT-70S-G |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
| CDST-99-HF |
Halogen Free Switching Diodes Array, V-RRM=70V, V-R=70V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| ZXMP7A17K ZXMP7A17KTC |
70V P-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| ZXMP7A17G ZXMP7A17GTA ZXMP7A17GTC |
70V P-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| IRG4BC30WPBF |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）最大\u003d 2.70V @和VGE \u003d 15V的，集成电路\u003d 12A条）
|
International Rectifier, Corp.
|
| BUK7109-75AIE BUK7909-75AIE |
TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-220VAR
TrenchPLUS standard level FET
|
Philips
|
| TC514102AJ-60 TC514102AP TC514102AP-60 TC514102ASJ |
T-NPN- SI-LO-NOISE
4,194,304 x 1 BIT DYNAMIC RAM
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
