PART |
Description |
Maker |
RJK6006DPD RJK6006DPD-00-J2 RJK6006DPD-15 |
Silicon N Channel MOS FET High Speed Power Switching 5 A, 600 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET MP-3A, SC-63, 3 PIN
|
Renesas Electronics Corporation
|
RJE0601JPE-00-J3 RJE0601JPE RJE0601JPE-15 |
Silicon P Channel MOS FET Series Power Switching 40 A, 60 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
|
Renesas Electronics Corporation
|
RJK6066DPP-M0 RJK6066DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching 5 A, 600 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
|
Renesas Electronics Corporation
|
RJK1526DPE-J3 RJK1526DPJ-15 |
50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
NP80N03KDE NP80N03KDE-E1-AY NP80N03KDE-E2-AY NP80N |
80 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZJ, TO-263, 3 PIN MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
Pericom Semiconductor, Corp. NEC
|
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY |
MOS FIELD EFFECT TRANSISTOR 110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
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