| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
| 2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
| 2SD1820A |
Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| BCV61C BCV61A |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| 2SC4852 |
Small output capacitance. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| BCV62 |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| SMBTA06 SMBTA0607 |
NPN Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
