| PART |
Description |
Maker |
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| RJK6024DPD-00J2 RJK6024DPD-12 |
600V - 0.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DPE RJK6002DPE-00J3 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPP-E0 RJK60S4DPP-E0-T2 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SK1274 2SK1274-T |
N-channel power MOS FET
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK2110 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
