| PART |
Description |
Maker |
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH6613 |
Power MOSFET 30V, 0.35A, 3.7Ohm,-30V, -0.2A, 10.4Ohm, Complementary Dual MCPH6
|
ON Semiconductor
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FDD068AN03L FDU068AN03L FDD068AN03 |
N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m
N-Channel PowerTrench MOSFET 30V, 35A, 6.8mз
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 35A-ifsm 0.875V-vf 25ns 2uA-ir DO-41 5K/REEL-13
30V N-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|
| IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL I |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
|
IRF[International Rectifier]
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP3703 |
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?
|
International Rectifier
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FMC6G10US60 |
IGBT
Compact & Complex Module
Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
| FMC7G20US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DTD743XE DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
