PART |
Description |
Maker |
WPS512K8X WPS512K8 WPS512K8B-XXXRJI WPS512K8B-XXXR |
DIODE ZENER SINGLE 200mW 3Vz 5mA-Izt 0.0667 10uA-Ir 1 SOT-323 3K/REEL 512Kx8 SRAM 512Kx8SRAM 512Kx8 SRAM 512Kx8的SRAM 115-230V CURR RELAY 512Kx8的SRAM
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White Microelectronics List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
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WMF512K8 |
512Kx8 Monolithic Flash(512Kx8单片闪速存储器)
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White Electronic Designs Corporation
|
5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM BOX 4.38X3.25X0.91BLACK BULK STD BLK BOX (3.25X4.38X0.9) STD-I BLK BOX (3.25X4.38X0.9) BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器 BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器 BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器 BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器 BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器 STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器 BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器 512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器 END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器 DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height, SENSOR HI-IMP 30PSIA DIP PKG 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 35ns; 512K x 8 monilithic SRAM, SMD 5962-95613 15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers List of Unclassifed Man... White Electronic Designs
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KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32 512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时0500ns
|
White Electronic Designs Corporation
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WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613 120ns; 512K x 8 monolithic SRAM, SMD 5962-95613 70ns; 512K x 8 monolithic SRAM, SMD 5962-95613 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
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White Electronic Designs
|
WS512K8L-25CMA |
512Kx8 SRAM MODULE, SMD 5962-92078 512Kx8的SRAM模块,贴962-92078
|
Electronic Theatre Controls, Inc.
|
KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16)的CMOS掩模ROM分位512Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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MSM832T MSM832S MSM832V MSM832W |
(MSM832x) 32K x 8 Monolithic CMOS SRAM
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Hybrid Memory Products
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