PART |
Description |
Maker |
TSI30H150CW |
30A, 100V - 200V Trench Schottky Rectifiers
|
Taiwan Semiconductor Co...
|
NTSV30100CT |
30A, 100V Very Low Forward Voltage Trench-Based Schottky Rectifier
|
ON Semiconductor
|
BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
RURG3020CC FN3552 |
From old datasheet system 30A 200V Ultrafast Dual Diode 30A, 200V Ultrafast Dual Diode
|
INTERSIL[Intersil Corporation]
|
OM6035NM |
200V, N-Channel, 30Amp MOSFET(200V ,30A, N沟道,MOS场效应管) 00V,N沟道30Amp MOSFET的(00V0A条,沟道来说,MOS场效应管
|
Omnirel International Rectifier, Corp.
|
BYW51-100 BYW51-150 BYW51-200 FN1374.PDF FN1412 |
25C 16 190/38 BC PVC,PVC 8A/ 100V - 200V Ultrafast Dual Diodes 8A, 100V - 200V Ultrafast Dual Diodes From old datasheet system
|
INTERSIL[Intersil Corporation]
|
P2H30F2 |
FRD MODULE 30A/200V
|
NIEC[Nihon Inter Electronics Corporation]
|
RCJ300N20 |
Nch 200V 30A Power MOSFET
|
Rohm
|
YG808C10R |
SCHOTTKY BARRIER DIODE(100V / 30A TO-22OF15)
|
FUJI[Fuji Electric]
|
FRE9160R FRE9160D FN3268 FRE9160H RE9160H |
30 A, 100 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA From old datasheet system 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs 30A/ -100V/ 0.095 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
RGTH60TK65D |
650V 30A Field Stop Trench IGBT
|
ROHM
|