PART |
Description |
Maker |
WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module EEPROM MCP
|
White Electronic Designs
|
UT6716455PPX UT6716470PPX UT6716455WCA UT6716470WC |
64K SRAM, 8Kx8. 55ns access time Lead finish optional. Prototype flow. 64K SRAM, 8Kx8. 70ns access time Lead finish optional. Prototype flow. 64K SRAM, 8Kx8. 55ns access time Lead finish solder. 64K SRAM, 8Kx8. 70ns access time Lead finish solder. 64K SRAM, 8Kx8. 85ns access time Lead finish solder.
|
Aeroflex Circuit Technology
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M41T80M6E M41T80M6F M41T8006 M41T80 |
Serial access Real Time Clock with alarm
|
STMICROELECTRONICS[STMicroelectronics]
|
M41T66Q6F |
Serial access real-time clock with alarms
|
STMicroelectronics
|
M41T63 M41T64 |
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
|
UDT555UV/LN |
Serial Access Real-Time Clock with Alarms 集成电路放大器输出相
|
Electronic Theatre Controls, Inc.
|
MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM
|
Mitsubishi Electric Corporation
|
5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
M41T50 M41T50Q6F |
Serial Access Digital Input Real-Time Clock with Alarms
|
STMICROELECTRONICS[STMicroelectronics]
|