PART |
Description |
Maker |
GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM 70ns; Ultra low power 64K x 16 CMOS SRAM 85ns; Ultra low power 64K x 16 CMOS SRAM 100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
BS616UV1010EIP10 BS616UV1010DIG10 BS616UV1010AI10 |
Ultra Low Power CMOS SRAM 64K X 16 bit 超低功耗CMOS SRAM 64K的16
|
BRILLIANCE SEMICONDUCTOR, INC.
|
N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
BS616UV1010EI BS616UV1010 BS616UV1010AC BS616UV101 |
Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|
N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28 ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
|
BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
AS7C1026B AS7C1026B-20TIN AS7C1026B-10JC AS7C1026B |
High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 64K X 16 STANDARD SRAM, 20 ns, PDSO44 5 V 64K X 16 CMOS SRAM 54K的16 CMOS SRAM 5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44 5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44 5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44 High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-PDIP -55 to 125 High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125 High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SOIC -55 to 125 SRAM - 5V Fast Asynchronous
|
Analog Devices, Inc. Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
AS6C1016-55BIN AS6C1016-55ZIN |
64K X 16 BIT LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
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AS7C31026 AS7C31026-10 AS7C31026-10BC AS7C31026-10 |
5V/3.3V 64K16 CMOS SRAM 8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85 CONN SOCKET IC 16-PIN SMD 8-Bit Parallel-Load Shift Registers 16-TSSOP -40 to 85 CONN SOCKET IC 18-PIN SMD 8-Bit Parallel-Load Shift Registers 16-SO -40 to 85 64K X 16 STANDARD SRAM, 20 ns, PBGA48 5V/3.3V 64Kx6 CMOS SRAM 5V/3.3V 64Kx6 CMOS SRAM 5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44 5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44 5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44 5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PBGA48 5V/3.3V 64Kx6 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
|
IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM (IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
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