PART |
Description |
Maker |
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
TGF2022-12 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2021-02 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2021-08 TGF2021-08-15 |
DC - 12 GHz Discrete power pHEMT
|
TriQuint Semiconductor, Inc.
|
TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
HMC998 |
GaAs pHEMT MMIC
|
Hittite Microwave Corporation
|
AL108-338 |
GaAs PHEMT Switchable Gain LNA
|
Alpha Industries, Inc. Alpha Industries Inc
|
AL108-338 |
GaAs PHEMT Switchable Gain LNA
|
ALPHA[Alpha Industries]
|
HMC374SC70E |
GaAs pHEMT LOW NOISE AMPLIFIER
|
Analog Devices
|
SKY13252-321 |
PHEMT GaAs IC Diversity Switch DC-6 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|