PART |
Description |
Maker |
TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com SIRENZA MICRODEVICES
|
SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻,高功率-卓越的长期稳 Resistors, fixed discrete
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
GX3442 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|