| PART |
Description |
Maker |
| LD1490-C010 |
Lasing Mode: single longitudinal mode Peak Wavelength : typ. 1490 nm Optiacl Ouput Power: 10 mW, CW Package: 5.6 mm, flat window
|
Roithner LaserTechnik G...
|
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| H.QL5-500KV-0.2A |
High voltage rectifier block adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| H.QL5-500KV-0.1A |
High voltage rectifier block adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 3QLG5-500KV-0.1A |
High voltage rectifier block adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 3QLG5-500KV-0.5A |
High voltage rectifier block adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 2CL100KV2.5A |
High voltage rectifier diodes 2CL100KV/2.5A series adopt high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 2CL15KV-400MA |
High voltage rectifier diodes 2CL15KV/400mA Series adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 2CL20KV-30MA |
High voltage rectifier diodes 2CL20KV/30mA Series adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| 3QLG-500KV0.2A |
High voltage 3-phase rectifier bridge 3 QLG5~500KV/0.2A adopts high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure.
|
Anshan Suly Electronics
|
| LD-520-50SG |
Direct Emitting Green Laser Diode 520 nm 50 mW single Transverse Mode Structure: GaN
|
Roithner LaserTechnik GmbH
|
| HL6342G HL6339G |
(HL6339G / HL6342G) 633nm Lasing Laser Diode
|
Hitachi Semiconductor
|
