PART |
Description |
Maker |
JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
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Vishay Semiconductors
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1S922 1S923 1S923TR 1S922TR |
Small Signal Diode 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 Small Signal Diode 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35 High Conductance Fast Diode
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
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1N4948-E3-PKG4 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP, LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
EGF1T-HE3 |
DIODE 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
BAL99LT1G BAL99LT1 BAL99L |
Small Signal Diode From old datasheet system SWITCHING DIODE 0.1 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
RGP10KE RGP10AE RGP10DE RGP10BE RGP10JE |
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode Diodes DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
1N4150UR-11 1N4150UR-1 JAN1N4150UR-1 |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, SILICON, SIGNAL DIODE, DO-213AA SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
JAN1N6809UEG2 JAN1N6807UEG2 JANTX1N6810UEG2 |
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214BA, PLASTIC, DO-214BA, 2 PIN, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, PLASTIC, DO-214BA, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
1N6662US 1N6663US 1N6661US JAN1N6662US JANTXV1N666 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 400; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35 Signal or Computer Diode; Package: A_SQ._MELF; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 225; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
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Microsemi Corporation Microsemi, Corp.
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